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BUZ311 View Datasheet(PDF) - Siemens AG

Part NameDescriptionManufacturer
BUZ311 SIPMOS® Power Transistor Siemens
Siemens AG Siemens
BUZ311 Datasheet PDF : 9 Pages
1 2 3 4 5 6 7 8 9
BUZ 311
Drain-source on-resistance
RDS (on) = ƒ(Tj)
parameter: ID = 1.5 A, VGS = 10 V
24
20
RDS (on)
18
16
14
12
10
8
6
4
2
0
-60
-20
98%
typ
20
60
100 °C 160
Tj
Gate threshold voltage
VGS (th) = ƒ(Tj)
parameter: VGS = VDS, ID = 1 mA
4.6
V
4.0
VGS(th) 3.6
3.2
98%
typ
2.8
2.4
2%
2.0
1.6
1.2
0.8
0.4
0.0
-60
-20
20
60
100 °C 160
Tj
Typ. capacitances
C = f (VDS)
parameter:VGS = 0V, f = 1MHz
10 1
Forward characteristics of reverse diode
IF = ƒ(VSD)
parameter: Tj, tp = 80 µs
10 1
nF
C
10 0
A
Ciss
IF
10 0
10 -1
Coss
Crss
10 -2
0
5 10 15 20 25 30 V 40
VDS
Semiconductor Group
7
10 -1
Tj = 25 °C typ
Tj = 150 °C typ
Tj = 25 °C (98%)
Tj = 150 °C (98%)
10 -2
0.0 0.4 0.8 1.2 1.6 2.0 2.4 V 3.0
VSD
07/96
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