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BUZ311 View Datasheet(PDF) - Siemens AG

Part NameDescriptionManufacturer
BUZ311 SIPMOS Power Transistor Siemens
Siemens AG Siemens
BUZ311 Datasheet PDF : 9 Pages
1 2 3 4 5 6 7 8 9
BUZ 311
Power dissipation
Ptot = ƒ(TC)
80
W
Ptot
60
50
40
30
20
10
0
0 20 40 60 80 100 120 °C 160
TC
Safe operating area
ID = ƒ(VDS)
parameter: D = 0.01, TC = 25°C
10 2
A
I
D 10 1
tp = 630.0ns
1 µs
10 µs
Drain current
ID = ƒ(TC)
parameter: VGS 10 V
2.6
A
2.2
ID
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
0 20 40 60 80 100 120 °C 160
TC
Transient thermal impedance
Zth JC = ƒ(tp)
parameter: D = tp / T
10 1
K/W
Z
thJC 10 0
10 0
10 -1
100 µs
1 ms
10 ms
DC
10 -1
10 -2
single pulse
D = 0.50
0.20
0.10
0.05
0.02
0.01
10 -2
10 0
10 1
Semiconductor Group
10 2
V 10 3
VDS
5
10 -3
10 -7
10 -6
10 -5
10 -4
10 -3
10 -2
10 -1 s 10 0
tp
07/96
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