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BUZ311 View Datasheet(PDF) - Siemens AG

Part NameDescriptionManufacturer
BUZ311 SIPMOS® Power Transistor Siemens
Siemens AG Siemens
BUZ311 Datasheet PDF : 9 Pages
1 2 3 4 5 6 7 8 9
BUZ 311
Electrical Characteristics, at Tj = 25°C, unless otherwise specified
Parameter
Symbol
min.
Values
typ.
max.
Dynamic Characteristics
Transconductance
VDS2 * ID * RDS(on)max, ID = 1.5 A
Input capacitance
VGS = 0 V, VDS = 25 V, f = 1 MHz
Output capacitance
VGS = 0 V, VDS = 25 V, f = 1 MHz
Reverse transfer capacitance
VGS = 0 V, VDS = 25 V, f = 1 MHz
Turn-on delay time
VDD = 30 V, VGS = 10 V, ID = 2 A
RGS = 50
Rise time
VDD = 30 V, VGS = 10 V, ID = 2 A
RGS = 50
Turn-off delay time
VDD = 30 V, VGS = 10 V, ID = 2 A
RGS = 50
Fall time
VDD = 30 V, VGS = 10 V, ID = 2 A
RGS = 50
gfs
0.7
Ciss
-
Coss
-
Crss
-
td(on)
-
tr
-
td(off)
-
tf
-
1.5
-
1600 2100
70
120
30
55
30
45
40
60
110
140
60
80
Unit
S
pF
ns
Semiconductor Group
3
07/96
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