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BUZ311 View Datasheet(PDF) - Siemens AG

Part NameDescriptionManufacturer
BUZ311 SIPMOS® Power Transistor Siemens
Siemens AG Siemens
BUZ311 Datasheet PDF : 9 Pages
1 2 3 4 5 6 7 8 9
BUZ 311
Electrical Characteristics, at Tj = 25°C, unless otherwise specified
Parameter
Symbol
min.
Values
Unit
typ.
max.
Static Characteristics
Drain- source breakdown voltage
VGS = 0 V, ID = 0.25 mA, Tj = 25 °C
Gate threshold voltage
VGS=VDS, ID = 1 mA
Zero gate voltage drain current
VDS = 1000 V, VGS = 0 V, Tj = 25 °C
VDS = 1000 V, VGS = 0 V, Tj = 125 °C
Gate-source leakage current
VGS = 20 V, VDS = 0 V
Drain-Source on-resistance
VGS = 10 V, ID = 1.5 A
V(BR)DSS
1000
VGS(th)
2.1
IDSS
-
-
IGSS
-
RDS(on)
-
-
3
20
100
10
4.5
V
-
4
µA
250
1000
nA
100
5
Semiconductor Group
2
07/96
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