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BUZ311 View Datasheet(PDF) - Siemens AG

Part NameDescriptionManufacturer
BUZ311 SIPMOS® Power Transistor Siemens
Siemens AG Siemens
BUZ311 Datasheet PDF : 9 Pages
1 2 3 4 5 6 7 8 9
SIPMOS ® Power Transistor
• N channel
• Enhancement mode
BUZ 311
Pin 1
G
Pin 2
D
Pin 3
S
Type
BUZ 311
VDS
ID
1000 V 2.5 A
RDS(on)
5
Maximum Ratings
Parameter
Drain source voltage
Drain-gate voltage
RGS = 20 k
Continuous drain current
TC = 25 °C
Pulsed drain current
TC = 25 °C
Gate source voltage
Power dissipation
TC = 25 °C
Operating temperature
Storage temperature
Thermal resistance, chip case
Thermal resistance, chip to ambient
DIN humidity category, DIN 40 040
IEC climatic category, DIN IEC 68-1
Package
TO-218 AA
Ordering Code
C67078-A3102-A2
Symbol
VDS
VDGR
ID
IDpuls
VGS
Ptot
Tj
Tstg
RthJC
RthJA
Values
Unit
1000
V
1000
A
2.5
10
± 20
V
W
78
-55 ... ...+ 150 °C
-55 ... ...+ 150
1.6
K/W
75
C
55 / 150 / 56
Semiconductor Group
1
07/96
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