BUZ22 View Datasheet(PDF) - Siemens AG
Part Name
Description
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BUZ22 Datasheet PDF : 9 Pages
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BUZ 22
Avalanche energy EAS = ƒ(Tj)
parameter: ID = 34 A, VDD = 25 V
RGS = 25 Ω, L = 285.5 µH
240
mJ
200
EAS
180
160
140
120
100
80
60
40
20
0
20 40 60 80 100 120 °C 160
Tj
Drain-source breakdown voltage
V(BR)DSS = ƒ(Tj)
Typ. gate charge
VGS = ƒ(QGate)
parameter: ID puls = 51 A
16
V
VGS
12
10
0,2
V
DS
max
0,8
V
DS
max
8
6
4
2
0
0 10 20 30 40 50 60 70 80 nC 100
QGate
120
V
116
V(BR)DSS114
112
110
108
106
104
102
100
98
96
94
92
90
-60
-20
20
60
100 °C 160
Tj
Semiconductor Group
8
07/96
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