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BUZ12A View Datasheet(PDF) - Siemens AG

Part Name
Description
View to exact match
BUZ12A
Siemens
Siemens AG Siemens
BUZ12A Datasheet PDF : 9 Pages
1 2 3 4 5 6 7 8 9
BUZ 12 A
Not for new design
Avalanche energy EAS = ƒ(Tj)
parameter: ID = 42 A, VDD = 25 V
RGS = 25 , L = 23.2 µH
45
mJ
EAS 35
30
25
20
15
10
5
0
20 40 60 80 100 120 °C 160
Tj
Drain-source breakdown voltage
V(BR)DSS = ƒ(Tj)
Typ. gate charge
VGS = ƒ(QGate)
parameter: ID puls = 63 A
16
V
VGS
12
10
8
0,2
V
DS
max
0,8
V
DS
max
6
4
2
0
0 10 20 30 40 50 60 70 80 nC 100
QGate
60
V
V(BR)DSS 57
56
55
54
53
52
51
50
49
48
47
46
45
-60
-20
20
60
100 °C 160
Tj
Semiconductor Group
8
07/96
 

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