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BUZ12A View Datasheet(PDF) - Siemens AG

Part Name
Description
View to exact match
BUZ12A
Siemens
Siemens AG Siemens
BUZ12A Datasheet PDF : 9 Pages
1 2 3 4 5 6 7 8 9
SIPMOS ® Power Transistor
BUZ 12 A
Not for new design
• N channel
• Enhancement mode
• Avalanche-rated
Pin 1
G
Pin 2
D
Pin 3
S
Type
BUZ 12 A
VDS
50 V
ID
42 A
RDS(on)
0.035
Maximum Ratings
Parameter
Continuous drain current
TC = 44 °C
Pulsed drain current
TC = 25 °C
Avalanche current,limited by Tjmax
Avalanche energy,periodic limited by Tjmax
Avalanche energy, single pulse
ID = 42 A, VDD = 25 V, RGS = 25
L = 23.2 µH, Tj = 25 °C
Gate source voltage
Power dissipation
TC = 25 °C
Operating temperature
Storage temperature
Thermal resistance, chip case
Thermal resistance, chip to ambient
DIN humidity category, DIN 40 040
IEC climatic category, DIN IEC 68-1
Package
TO-220 AB
Symbol
ID
IDpuls
IAR
EAR
EAS
VGS
Ptot
Tj
Tstg
RthJC
RthJA
Ordering Code
C67078-S1331-A3
Values
Unit
A
42
168
42
2.5
mJ
41
± 20
V
W
125
-55 ... + 150 °C
-55 ... + 150
1
K/W
75
E
55 / 150 / 56
Semiconductor Group
1
07/96
 

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