BUZ111 View Datasheet(PDF) - Siemens AG
Part Name
Description
View to exact match
BUZ111 Datasheet PDF : 8 Pages
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BUZ111S
SPP80N05
Avalanche energy EAS = ƒ(Tj)
parameter: ID = 80 A, VDD = 25 V
RGS = 25 Ω, L = 220 µH
750
mJ
650
EAS 600
550
500
450
400
350
300
250
200
150
100
50
0
20 40 60 80 100 120 140 °C 180
Tj
Drain-source breakdown voltage
V(BR)DSS = ƒ(Tj)
Typ. gate charge
VGS = ƒ(QGate)
parameter: ID puls = 80 A
16
V
VGS
12
10
0,2 VDS max
0,8 VDS max
8
6
4
2
0
0 20 40 60 80 100 120 140 nC 170
QGate
65
V
V
(BR)DSS
61
59
57
55
53
51
49
-60
-20
20
60 100 °C 180
Tj
Semiconductor Group
8
28/Jan/1998
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