BUZ111S
SPP80N05
Electrical Characteristics, at Tj = 25°C, unless otherwise specified
Parameter
Symbol
min.
Dynamic Characteristics
Transconductance
VDS≥ 2 * ID * RDS(on)max, ID = 80 A
Input capacitance
VGS = 0 V, VDS = 25 V, f = 1 MHz
Output capacitance
VGS = 0 V, VDS = 25 V, f = 1 MHz
Reverse transfer capacitance
VGS = 0 V, VDS = 25 V, f = 1 MHz
Turn-on delay time
VDD = 30 V, VGS = 10 V, ID = 80 A
RG = 2.4 Ω
Rise time
VDD = 30 V, VGS = 10 V, ID = 80 A
RG = 2.4 Ω
Turn-off delay time
VDD = 30 V, VGS = 10 V, ID = 80 A
RG = 2.4 Ω
Fall time
VDD = 30 V, VGS = 10 V, ID = 80 A
RG = 2.4 Ω
Gate charge at threshold
VDD = 40 V, ID ≥ 0.1 A, VGS =0 to 1 V
Gate charge at 7.0 V
VDD = 40 V, ID = 80 A, VGS =0 to 7 V
Gate charge total
VDD = 40 V, ID = 80 A, VGS =0 to 10 V
Gate plateau voltage
VDD = 40 V, ID = 80 A
Semiconductor Group
gfs
30
Ciss
-
Coss
-
Crss
-
td(on)
-
tr
-
td(off)
-
tf
-
Qg(th)
-
Qg(7)
-
Qg(total)
-
V(plateau)
-
3
Values
Unit
typ.
max.
S
-
-
pF
3600
4500
1100
1375
550
690
ns
25
37
30
45
65
95
40
60
nC
3.3
5
95
140
125
185
V
5.45
-
28/Jan/1998