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BUZ110SL View Datasheet(PDF) - Siemens AG

Part Name
Description
View to exact match
BUZ110SL
Siemens
Siemens AG Siemens
BUZ110SL Datasheet PDF : 8 Pages
1 2 3 4 5 6 7 8
BUZ 110 SL
SPP80N05L
Drain-source on-resistance
RDS (on) = ƒ(Tj)
parameter: ID = 59 A, VGS = 4.5 V
0.050
RDS
0.040
(on)
0.035
0.030
0.025
0.020
0.015
98%
typ
0.010
0.005
0.000
-60
-20
20
60 100 °C 180
Tj
Typ. capacitances
C = f (VDS)
parameter:VGS = 0V, f = 1MHz
10 4
Gate threshold voltage
VGS(th)= f (Tj)
parameter:VGS=VDS,ID = 200µA
3.0
V
2.6
VGS(th) 2.4
2.2
2.0
1.8
1.6
1.4
1.2
1.0
max
0.8
0.6
typ
0.4
0.2
0.0
min
-60 -20 20 60 100 140 V 200
Tj
Forward characteristics of reverse diode
IF = ƒ(VSD)
parameter: Tj, tp = 80 µs
10 3
C
pF
A
I
F
Ciss
10 2
10 3
Coss
Crss
10 2
0
5 10 15 20 25 30 V 40
VDS
Semiconductor Group
7
10 1
Tj = 25 °C typ
Tj = 175 °C typ
Tj = 25 °C (98%)
Tj = 175 °C (98%)
10 0
0.0 0.4 0.8 1.2 1.6 2.0 2.4 V 3.0
VSD
28/Jan/1998
 

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