BUZ103S View Datasheet(PDF) - Siemens AG
Part Name
Description
View to exact match
BUZ103S Datasheet PDF : 8 Pages
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Maximum Ratings
Parameter
Operating temperature
Storage temperature
Thermal resistance, junction - case
Thermal resistance, junction - ambient
IEC climatic category, DIN IEC 68-1
BUZ 103 S
SPP31N05
Symbol
Tj
Tstg
RthJC
RthJA
Values
Unit
-55 ... + 175 °C
-55 ... + 175
≤2
K/W
≤ 62
55 / 175 / 56
Electrical Characteristics, at Tj = 25°C, unless otherwise specified
Parameter
Symbol
Values
Unit
min.
typ.
max.
Static Characteristics
Drain- source breakdown voltage
VGS = 0 V, ID = 0.25 mA, Tj = 25 °C
Gate threshold voltage
VGS=VDS, ID = 50 µA
Zero gate voltage drain current
VDS = 50 V, VGS = 0 V, Tj = -40 °C
VDS = 50 V, VGS = 0 V, Tj = 25 °C
VDS = 50 V, VGS = 0 V, Tj = 150 °C
Gate-source leakage current
VGS = 20 V, VDS = 0 V
Drain-Source on-resistance
VGS = 10 V, ID = 22 A
V(BR)DSS
55
VGS(th)
2.1
IDSS
-
-
-
IGSS
-
RDS(on)
-
V
-
-
3
-
0.1
-
10
0.03
4
µA
0.1
1
100
nA
100
Ω
0.04
Semiconductor Group
2
30/Jan/1998
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