BUZ103AL View Datasheet(PDF) - Siemens AG
Part Name
Description
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BUZ103AL Datasheet PDF : 9 Pages
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BUZ 103AL
Typ. output characteristics
ID = ƒ(VDS)
parameter: tp = 80 µs
80
Ptot = 120W
l kj i
A
ID
60
50
40
30
20
hVGS [V]
a 2.0
b 2.5
g
c 3.0
d 3.5
e 4.0
f
f 4.5
g 5.0
e h 5.5
i 6.0
j 7.0
d k 8.0
l 10.0
c
10
b
0
a
0.0 1.0 2.0 3.0 4.0
V
6.0
VDS
Typ. transfer characteristics ID = f (VGS)
parameter: tp = 80 µs
VDS≥2 x ID x RDS(on)max
55
A
45
ID
40
35
30
25
20
15
10
5
0
0 1 2 3 4 5 6 7 8 V 10
VGS
Drain-source on-resistance
RDS (on) = ƒ(Tj)
parameter: ID = 17.5 A, VGS = 5 V
0.14
Ω
0.12
RDS (on)0.11
0.10
0.09
0.08
0.07
98%
0.06
0.05
typ
0.04
0.03
0.02
0.01
0.00
-60 -20
20
60 100 °C 180
Tj
Typ. forward transconductance gfs = f (ID)
parameter: tp = 80 µs,
VDS≥2 x ID x RDS(on)max
35
S
gfs
25
20
15
10
5
0
0 5 10 15 20 25 30 35 A 45
ID
Semiconductor Group
6
07/96
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