BUZ103 View Datasheet(PDF) - Siemens AG
Part Name
Description
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BUZ103 Datasheet PDF : 9 Pages
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BUZ 103
Avalanche energy EAS = ƒ(Tj)
parameter: ID = 40 A, VDD = 25 V
RGS = 25 Ω, L = 63 µH
110
mJ
EAS 90
80
70
60
50
40
30
20
10
0
20 40 60 80 100 120 140 °C 180
Tj
Drain-source breakdown voltage
V(BR)DSS = ƒ(Tj)
Typ. gate charge
VGS = ƒ(QGate)
parameter: ID puls = 60 A
16
V
VGS
12
10
0,2 VDS max
0,8 VDS max
8
6
4
2
0
0 5 10 15 20 25 30 35 nC 45
QGate
62
V
60
V(BR)DSS 59
58
57
56
55
54
53
52
51
50
49
48
47
-60 -20
20
60 100 °C 180
Tj
Semiconductor Group
8
07/96
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