BU2508D View Datasheet(PDF) - SavantIC Semiconductor
Part Name
Description
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BU2508D Datasheet PDF : 3 Pages
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SavantIC Semiconductor
Silicon NPN Power Transistors
Product Specification
BU2508D
CHARACTERISTICS
Tj=25 unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEO(SUS) Collector-emitter sustaining voltage IC=0.1A; IB=0,L=25mH
V(BR)EBO Emitter-base breakdown voltage
IE=600mA; IC=0
VCE(sat-1) Collector-emitter saturation voltage IC=4.5A; IB=1.1A
VCE(sat-2) Collector-emitter saturation voltage IC=4.5A; IB=1.29A
VBE(sat) Base-emitter saturation voltage
ICES
Collector cut-off current
IEBO
Emitter cut-off current
IC=4.5A; IB=1.7A
VCE=rated; VBE=0
T=125°C
VEB=7.5V; IC=0
hFE-1
DC current gain
IC=1A ; VCE=5V
hFE-2
DC current gain
VF
Diode forward voltage
CC
Collector capacitance
IC=4.5A ; VCE=1V
IF=4.5A
VCB=10V;f=1MHz
MIN TYP. MAX UNIT
700
V
7.5
13.5
V
5.0
V
1.0
V
1.3
V
1.0
2.0
mA
140
390
mA
7
13
23
4
5.5
7.5
1.6
2.0
V
80
pF
2
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