BU2508A View Datasheet(PDF) - Inchange Semiconductor
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BU2508A Datasheet PDF : 2 Pages
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INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
BU2508A
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP. MAX UNIT
VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 100mA ; IB= 0,L= 25mH
700
V
V(BR)EBO Emitter-Base Breakdown Voltage
IE= 1mA; IC= 0
7.5
V
VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 4.5A; IB= 1.1A
VCE(sat)-2 Collector-Emitter Saturation Voltage IC= 4.5A; IB= 1.29A
VBE(sat) Base-Emitter Saturation Voltage
ICES
Collector Cutoff Current
IEBO
Emitter Cutoff Current
IC= 4.5A; IB= 1.7A
VCE= 1500V ; VBE= 0
VCE= 1500V ; VBE= 0; TC=125℃
VEB= 7.5V ; IC= 0
5.0
V
1.0
V
1.3
V
1.0
2.0
mA
1.0 mA
hFE-1
DC Current Gain
IC= 0.1A ; VCE= 5V
6
26
hFE-2
DC Current Gain
IC= 4.5A ; VCE= 1V
4
COB
Output Capacitance
Switching times
IE= 0; VCB= 10V; ftest= 1MHz
80
pF
tstg
Storage Time
tf
Fall Time
IC= 4.5A , IB(end)= 1.1A; LB= 6μH
-VBB= 4V; (-dIB/dt= 0.6A/μs)
6.0 μs
0.6 μs
isc Website：www.iscsemi.cn
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