BU2522A View Datasheet(PDF) - Inchange Semiconductor
Part Name
Description
View to exact match
BU2522A Datasheet PDF : 3 Pages
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Inchange Semiconductor
Silicon NPN Power Transistors
Product Specification
BU2522A
DESCRIPTION
·With TO-3PN package
·High voltage
·High speed switching
APPLICATIONS
·For use in horizontal deflection circuits
of high resolution monitors.
PINNING
PIN
1
2
3
DESCRIPTION
Base
Collector
Emitter
Fig.1 simplified outline (TO-3PN) and symbol
体 Absolute maximum ratings(Ta=25℃)
固I电NC半H导ANGE SEMICONDUCTOR SYMBOL
PARAMETER
CONDITIONS
VCBO
Collector-base voltage
Open emitter
VCEO
Collector-emitter voltage
Open base
IC
Collector current (DC)
VALUE
1500
800
10
UNIT
V
V
A
ICM
Collector current-peak
25
A
IB
Base current (DC)
6
A
IBM
Base current-peak
9
A
Ptot
Total power dissipation
TC=25℃
125
W
Tj
Junction temperature
150
℃
Tstg
Storage temperature
-65~150
℃
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