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BU2525A View Datasheet(PDF) - Philips Electronics

Part Name
Description
View to exact match
BU2525A
Philips
Philips Electronics Philips
BU2525A Datasheet PDF : 7 Pages
1 2 3 4 5 6 7
Philips Semiconductors
Silicon Diffused Power Transistor
Product specification
BU2525A
VBESAT / V
1.2
Tj = 25 C
1.1
Tj = 125 C
BU2525A
1
0.9
0.8
0.7
0.6
0
Fig.9.
IC=
8A
6A
5A
4A
1
2
3
4
IB / A
Typical base-emitter saturation voltage.
VBEsat = f (IB); parameter IC
VCESAT / V
10
BU2525A
Tj = 25 C
Tj = 125 C
8A
1
6A
5A
IC = 4 A
0.1
0.1
1
10
IB / A
Fig.10. Typical collector-emitter saturation voltage.
VCEsat = f (IB); parameter IC
Eoff / uJ
1000
IC = 8 A
BU2525A
7A
100
10
0.1
1
10
IB / A
Fig.11. Typical turn-off losses. Tj = 85˚C
Eoff = f (IB); parameter IC; f = 32 kHz
ts, tf / us
12
BU2525A
11
32 kHz
10
9
8
7
ts
6
5
4
IC =
3
2
1
8A
7A
tf
0
0.1
1
10
IB / A
Fig.12. Typical collector storage and fall time.
ts = f (IB); tf = f (IB); parameter IC; Tj = 85˚C; f = 32 kHz
120 PD%
Normalised Power Derating
110
100
90
80
70
60
50
40
30
20
10
0
0 20 40 60 80 100 120 140
Tmb / C
Fig.13. Normalised power dissipation.
PD% = 100PD/PD 25˚C = f (Tmb)
Zth / (K/W)
10
BU2525A
1
0.5
0.2
0.1
0.1
0.05
0.02
0.01
PD
tp
D=
tp
T
D=0
0.001
1E-06
1E-04
1E-02
t/s
T
t
1E+00
Fig.14. Transient thermal impedance.
Zth j-mb = f(t); parameter D = tp/T
November 1995
4
Rev 1.200
 

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