BU2520D View Datasheet(PDF) - Philips Electronics
Part Name
Description
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BU2520D Datasheet PDF : 6 Pages
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Philips Semiconductors
Silicon Diffused Power Transistor
Product specification
BU2520D
+ 150 v nominal
adjust for ICM
Lc
IBend
-VBB
D.U.T.
LB
Cfb
Rbe
Fig.3. Switching times test circuit.
hFE
100
10
5V
1V
BU2520D
Tj = 25 C
Tj = 125 C
1
0.1
Fig.4.
1
10
100
IC / A
Typical DC current gain. hFE = f (IC)
parameter VCE
VBESAT / V
1.2
Tj = 25 C
1.1
Tj = 125 C
1.0
BU2520D
0.9
0.8
0.7
IC/IB=
3
0.6
4
0.5
5
0.4
0.1
1
10
IC / A
Fig.5. Typical base-emitter saturation voltage.
VBEsat = f (IC); parameter IC/IB
VCESAT / V
1.0
0.9
0.8
0.7
0.6
IC/IB =
5
4
3
BU2520D
0.5
Tj = 25 C
0.4
Tj = 125 C
0.3
0.2
0.1
0
0.1
1
10
100
IC / A
Fig.6. Typical collector-emitter saturation voltage.
VCEsat = f (IC); parameter IC/IB
VBESAT / V
1.2
Tj = 25 C
1.1
Tj = 125 C
BU2520D
1.0
0.9
0.8
0.7
0.6
0
Fig.7.
IC=
8A
6A
5A
4A
1
2
3
4
IB / A
Typical base-emitter saturation voltage.
VBEsat = f (IB); parameter IC
VCESAT / V
10
BU2520D
Tj = 25 C
Tj = 125 C
8A
1
6A
5A
IC = 4 A
0.1
0.1
1
10
IB / A
Fig.8. Typical collector-emitter saturation voltage.
VCEsat = f (IB); parameter IC
November 1995
3
Rev 1.200
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