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BU2520A View Datasheet(PDF) - Philips Electronics

Part Name
Description
View to exact match
BU2520A
Philips
Philips Electronics Philips
BU2520A Datasheet PDF : 7 Pages
1 2 3 4 5 6 7
Philips Semiconductors
Silicon Diffused Power Transistor
Product specification
BU2520A
TRANSISTOR
IC
DIODE
ICM
t
IB
VCE
20us
26us
64us
IBend
t
t
Fig.3. Switching times waveforms (16 kHz).
TRANSISTOR
IC
DIODE
ICM
t
IB
VCE
10us
13us
32us
IBend
t
t
Fig.4. Switching times waveforms (32 kHz).
ICM
90 %
IC
ts
IB
IBend
10 %
tf
t
t
- IBM
Fig.5. Switching times definitions.
+ 150 v nominal
adjust for ICM
Lc
IBend
-VBB
LB
T.U.T.
BY228
Cfb
Fig.6. Switching times test circuit (BU2520A).
100 hFE
5V
10
1V
BU2520A
Tj = 25 C
Tj = 125 C
1
0.1
Fig.7.
1
10
100
IC / A
Typical DC current gain. hFE = f (IC)
parameter VCE
VBESAT / V
1.2
Tj = 25 C
1.1
Tj = 125 C
1
BU2520A
0.9
0.8
0.7
IC/IB=
3
0.6
4
0.5
5
0.4
0.1
1
10
IC / A
Fig.8. Typical base-emitter saturation voltage.
VBEsat = f (IC); parameter IC/IB
November 1995
3
Rev 1.200
 

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