BU2520A View Datasheet(PDF) - Philips Electronics
Part Name
Description
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BU2520A Datasheet PDF : 7 Pages
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Philips Semiconductors
Silicon Diffused Power Transistor
Product specification
BU2520A
STATIC CHARACTERISTICS
Tmb = 25 ˚C unless otherwise specified
SYMBOL PARAMETER
ICES
Collector cut-off current 2
ICES
IEBO
BVEBO
VCEOsust
Emitter cut-off current
Emitter-base breakdown voltage
Collector-emitter sustaining voltage
VCEsat
VBEsat
hFE
hFE
Collector-emitter saturation voltage
Base-emitter saturation voltage
DC current gain
CONDITIONS
VBE = 0 V; VCE = VCESMmax
VBE = 0 V; VCE = VCESMmax;
Tj = 125 ˚C
VEB = 7.5 V; IC = 0 A
IB = 1 mA
IB = 0 A; IC = 100 mA;
L = 25 mH
IC = 6.0 A; IB = 1.2 A
IC = 6.0 A; IB = 1.2 A
IC = 100 mA; VCE = 5 V
IC = 6 A; VCE = 5 V
MIN.
-
-
-
7.5
800
-
-
6
5
TYP. MAX. UNIT
-
1.0 mA
-
2.0 mA
-
1.0 mA
13.5 -
V
-
-
V
-
5.0
V
-
1.3
V
13 26
7
10
DYNAMIC CHARACTERISTICS
Tmb = 25 ˚C unless otherwise specified
SYMBOL PARAMETER
Cc
Collector capacitance
Switching times (32 kHz line
deflection circuit)
ts
Turn-off storage time
tf
Turn-off fall time
Switching times (16 kHz line
deflection circuit)
ts
Turn-off storage time
tf
Turn-off fall time
CONDITIONS
IE = 0 A; VCB = 10 V; f = 1 MHz
ICM = 6.0 A; LC = 330 µH; Cfb = 9 nF;
IB(end) = 0.85 A; LB = 3.45 µH;
-VBB = 4 V; (-dIB/dt = 1.2 A/µs)
ICM = 6.0 A; LC = 650 µH; Cfb = 19 nF;
IB(end) = 1.0 A; LB = 5.3 µH; -VBB = 4 V;
(-dIB/dt = 0.8 A / µs)
TYP.
115
3.0
0.2
4.5
0.35
MAX. UNIT
-
pF
4.0 µs
0.35 µs
5.5 µs
0.5 µs
+ 50v
100-200R
Horizontal
Oscilloscope
Vertical
100R
1R
6V
30-60 Hz
Fig.1. Test circuit for VCEOsust.
IC / mA
250
200
100
0
VCE / V
min
VCEOsust
Fig.2. Oscilloscope display for VCEOsust.
2 Measured with half sine-wave voltage (curve tracer).
November 1995
2
Rev 1.200
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