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BU1706AB View Datasheet(PDF) - Philips Electronics

Part Name
Description
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BU1706AB
Philips
Philips Electronics Philips
BU1706AB Datasheet PDF : 0 Pages
Philips Semiconductors
Silicon Diffused Power Transistor
Product specification
BU1706AB
Zth / (K/W)
1E+01
BU1706A
1E+00
0.5
0.2
1E-01 0.1
0.05
0.02
1E-02
D=0
PD
tp
tp
D= T
T
t
1E-03
1E-07
1E-05
1E-03
t/s
1E-01
1E+01
Fig.9. Transient thermal impedance.
Zth j-mb = f(t); parameter D = tp/T
VBESAT / V
1.2
BU1706A
1.1
Tj = 25 C
1
Tj = 125 C
0.9
0.8
IC/IB =
0.7
4
0.6
5
0.5
6
0.4
0.1
1
10
IC / A
Fig.10. Typical base-emitter saturation voltage.
VBEsat = f(IC); parameter IC/IB
VCESAT / V
1
0.9
IC/IB =
6
0.8
5
0.7
4
0.6
BU1706A
0.5
0.4
Tj = 25 C
0.3
Tj = 125 C
0.2
0.1
0
0.1
1
10
IC / A
Fig.11. Typical collector-emitter saturation voltage.
VCEsat = f(IC); parameter IC/IB
VBESAT / V
1.2
Tj = 25 C
1.1
Tj = 125 C
BU1706A
1
0.9
0.8
0.7
0.6
0
Fig.12.
IC =
3A
2A
1.5 A
0.5 A
1
2
3
4
IB / A
Typical base-emitter saturation voltage.
VBEsat = f(IB); parameter IC
VCESAT / V
10
BU1706A
1
3A
2A
1.5 A
0.1 IC = 0.5A
Tj = 25 C
Tj = 125 C
0.01
0.01
0.1
1
10
IB / A
Fig.13. Typical collector-emitter saturation voltage.
VCEsat = f(IB); parameter IC
h FE
100
BU1706A
5V
10
1V
Tj = 25 C
1
Tj = 125 C
0.1
0.01
0.1
1
10
IC / A
Fig.14. Typical DC current gain.
hFE = f(IC); parameter VCE
February 1998
4
Rev 1.000
 

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