BU1508DX View Datasheet(PDF) - Philips Electronics
Part Name
Description
View to exact match
BU1508DX Datasheet PDF : 7 Pages
| |||
Philips Semiconductors
Silicon Diffused Power Transistor
Product specification
BU1508DX
ISOLATION LIMITING VALUE & CHARACTERISTIC
Ths = 25 ˚C unless otherwise specified
SYMBOL PARAMETER
CONDITIONS
Visol
R.M.S. isolation voltage from all f = 50-60 Hz; sinusoidal
three terminals to external
waveform;
heatsink
R.H. ≤ 65% ; clean and dustfree
Cisol
Capacitance from T2 to external f = 1 MHz
heatsink
MIN. TYP. MAX. UNIT
-
2500 V
-
10
-
pF
STATIC CHARACTERISTICS
Ths = 25 ˚C unless otherwise specified
SYMBOL PARAMETER
ICES
Collector cut-off current 2
ICES
IEBO
BVEBO
Rbe
VCEOsust
Emitter cut-off current
Emitter-base breakdown voltage
Base-emitter resistance
Collector-emitter sustaining voltage
VCEsat
VBEsat
hFE
hFE
VF
Collector-emitter saturation voltage
Base-emitter saturation voltage
DC current gain
Diode forward voltage
CONDITIONS
VBE = 0 V; VCE = VCESMmax
VBE = 0 V; VCE = VCESMmax;
Tj = 125˚C
VEB = 7.5 V; IC = 0 A
IB = 600 mA
VEB = 7.5 V
IB = 0 A; IC = 100 mA;
L = 25 mH
IC = 4.5 A; IB = 1.1 A
IC = 4.5 A; IB = 1.7 A
IC = 1 A; VCE = 5 V
IC = 4.5 A; VCE = 1 V
IF = 4.5 A
MIN.
-
-
140
7.5
-
700
-
-
-
4
-
TYP. MAX. UNIT
-
1.0 mA
-
2.0 mA
-
390 mA
13.5 -
V
33
-
Ω
-
-
V
-
1.0
V
-
1.3
V
13
-
5.5 7.0
1.6 2.0
V
DYNAMIC CHARACTERISTICS
Ths = 25 ˚C unless otherwise specified
SYMBOL PARAMETER
Cc
Collector capacitance
Switching times (line deflection
circuit). Fig.1, Fig.2 and Fig.3.
ts
Turn-off storage time
tf
Turn-off fall time
CONDITIONS
IE = 0 A; VCB = 10 V; f = 1 MHz
ICM = 4.5 A; IB(end) = 1.1 A; LB = 6 µH;
-VBB = 4 V; (-dIB/dt = 0.6 A/µs)
TYP. MAX. UNIT
80
-
pF
5.0 6.0 µs
0.4 0.6 µs
2 Measured with half sine-wave voltage (curve tracer).
September 1997
2
Rev 1.300
|
|
Share Link: 