BTA25 View Datasheet(PDF) - STMicroelectronics
Part Name
Description
View to exact match
BTA25 Datasheet PDF : 12 Pages
| |||
Characteristics
1
Characteristics
BTA24, BTB24, BTA25, BTA26 and T25 series
Table 1. Absolute maximum ratings
Symbol
Parameter
D2PAK /
TO-220AB
IT(RMS)
RMS on-state current (full sine wave) RD91 /
TOP3 Ins.
TO-220AB Ins.
ITSM
I²t
Non repetitive surge peak on-state
current (full cycle, Tj initial = 25° C)
I²t Value for fusing
dI/dt
Critical rate of rise of on-state current
IG = 2 x IGT , tr ≤ 100 ns
VDSM/VRSM
Non repetitive surge peak off-state
voltage
F = 50 Hz
F = 60 Hz
tp = 10 ms
F = 120 Hz
tp = 10 ms
IGM
PG(AV)
Tstg
Tj
Peak gate current
Average gate power dissipation
tp = 20 µs
Storage junction temperature range
Operating junction temperature range
Value
Unit
Tc = 100° C
Tc = 90° C
Tc = 75° C
t = 20 ms
t = 16.7 ms
Tj = 125° C
Tj = 25° C
Tj = 125° C
Tj = 125° C
25
250
260
340
50
VDSM/VRSM
+ 100
4
1
- 40 to + 150
- 40 to + 125
A
A
A²s
A/µs
V
A
W
°C
Table 2.
Electrical characteristics (Tj = 25° C, unless otherwise specified), Snubberless™ and
Logic Level (3 quadrants) T25-G, BTA/BTB24...W, BTA25...W, BTA26...W
Symbol
Test Conditions
Quadrant
T25
BTA/BTB
Unit
T2535 CW
BW
IGT(1)
VGT
VGD
IH(2)
VD = 12 V RL = 33 Ω
VD = VDRM RL = 3.3 kΩ
Tj = 125° C
IT = 500 mA
IL
IG = 1.2 IGT
dV/dt (2) VD = 67 %VDRM gate open
(dI/dt)c (2) Without snubber
1. minimum IGT is guaranted at 5% of IGT max.
2. for both polarities of A2 referenced to A1.
I - II - III
I - II - III
MAX. 35
MAX.
I - II - III MIN.
MAX. 50
I - III
II
70
MAX.
80
Tj = 125° C MIN. 500
Tj = 125° C MIN. 13
35
50
mA
1.3
V
0.2
V
50
75
mA
70
80
mA
80
100
500 1000 V/µs
13
22 A/ms
2/12
|
|
Share Link: 