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BTB06-400C View Datasheet(PDF) - STMicroelectronics

Part Name
Description
View to exact match
BTB06-400C
ST-Microelectronics
STMicroelectronics ST-Microelectronics
BTB06-400C Datasheet PDF : 5 Pages
1 2 3 4 5
BTA06 B/C / BTB06 B/C
THERMAL RESISTANCES
Symbol
Parameter
Value
Unit
Rth (j-a) Junction to ambient
60
°C/W
Rth (j-c) DC Junction to case for DC
BTA
4.4
°C/W
BTB
3.2
Rth (j-c) AC Junction to case for 360° conduction angle
BTA
( F= 50 Hz)
BTB
3.3
°C/W
2.4
GATE CHARACTERISTICS (maximum values)
PG (AV) = 1W PGM = 10W (tp = 20 µs) IGM = 4A (tp = 20 µs)
ELECTRICAL CHARACTERISTICS
VGM = 16V (tp = 20 µs).
Symbol
Test Conditions
IGT
VD=12V (DC) RL=33
VGT
VGD
tgt
IL
VD=12V (DC) RL=33
VD=VDRM RL=3.3k
VD=VDRM IG = 500mA
dIG/dt = 3A/µs
IG=1.2 IGT
IH *
VTM *
IDRM
IRRM
IT= 500mA gate open
ITM= 8.5A tp= 380µs
VDRM Rated
VRRM Rated
dV/dt * Linear slope up to VD=67%VDRM
gate open
Quadrant
Suffix
Unit
B
C
Tj=25°C
I-II-III
MAX 50
25
mA
IV
MAX 100
50
Tj=25°C
I-II-III-IV MAX
1.5
V
Tj=110°C I-II-III-IV MIN
0.2
V
Tj=25°C
I-II-III-IV TYP
2
µs
Tj=25°C
Tj=25°C
Tj=25°C
Tj=25°C
Tj=110°C
Tj=110°C
I-III-IV
II
TYP
MAX
MAX
MAX
MAX
MIN
40
20
70
35
50
25
1.65
0.01
0.5
250 100
mA
mA
V
mA
V/µs
(dV/dt)c * (dI/dt)c = 2.7A/ms
Tj=110°C
* For either polarity of electrode A2 voltage with reference to electrode A1.
MIN 10
5
V/µs
2/5
 

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