datasheetbank_Logo
Integrated circuits, Transistor, Semiconductors Search and Datasheet PDF Download Site

BTA212-500B View Datasheet(PDF) - Philips Electronics

Part Name
Description
View to exact match
BTA212-500B
Philips
Philips Electronics Philips
BTA212-500B Datasheet PDF : 6 Pages
1 2 3 4 5 6
Philips Semiconductors
Three quadrant triacs
high commutation
Product specification
BTA212 series B
THERMAL RESISTANCES
SYMBOL PARAMETER
CONDITIONS
Rth j-mb
Rth j-a
Thermal resistance
full cycle
junction to mounting base half cycle
Thermal resistance
in free air
junction to ambient
MIN.
-
-
-
TYP.
-
-
60
MAX.
1.5
2.0
-
UNIT
K/W
K/W
K/W
STATIC CHARACTERISTICS
Tj = 25 ˚C unless otherwise stated
SYMBOL PARAMETER
IGT
Gate trigger current2
IL
Latching current
IH
Holding current
VT
On-state voltage
VGT
Gate trigger voltage
ID
Off-state leakage current
CONDITIONS
VD = 12 V; IT = 0.1 A
T2+ G+
T2+ G-
T2- G-
VD = 12 V; IGT = 0.1 A
T2+ G+
T2+ G-
T2- G-
VD = 12 V; IGT = 0.1 A
IT = 17 A
VD = 12 V; IT = 0.1 A
VD = 400 V; IT = 0.1 A; Tj = 125 ˚C
VD = VDRM(max); Tj = 125 ˚C
MIN. TYP. MAX. UNIT
2
18 50 mA
2
21 50 mA
2
34 50 mA
-
31 60 mA
-
34 90 mA
-
30 60 mA
-
31 60 mA
-
1.3 1.6 V
-
0.7 1.5 V
0.25 0.4
-
V
-
0.1 0.5 mA
DYNAMIC CHARACTERISTICS
Tj = 25 ˚C unless otherwise stated
SYMBOL PARAMETER
CONDITIONS
dVD/dt
dIcom/dt
tgt
Critical rate of rise of
off-state voltage
Critical rate of change of
commutating current
Gate controlled turn-on
time
VDM = 67% VDRM(max); Tj = 125 ˚C;
exponential waveform; gate open circuit
VDM = 400 V; Tj = 125 ˚C; IT(RMS) = 12 A;
without snubber; gate open circuit
ITM = 12 A; VD = VDRM(max); IG = 0.1 A;
dIG/dt = 5 A/µs
MIN. TYP. MAX. UNIT
1000 4000 - V/µs
-
24
- A/ms
-
2
-
µs
2 Device does not trigger in the T2-, G+ quadrant.
September 1997
2
Rev 1.200
 

Share Link: 

datasheetbank.com [ Privacy Policy ] [ Request Datasheet ] [ Contact Us ]