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BTA08-XXXSW View Datasheet(PDF) - STMicroelectronics

Part NameDescriptionManufacturer
BTA08-XXXSW 8A TRIACS ST-Microelectronics
STMicroelectronics ST-Microelectronics
BTA08-XXXSW Datasheet PDF : 11 Pages
1 2 3 4 5 6 7 8 9 10
BTA08, BTB08 and T8 Series
Table 3: Absolute Maximum Ratings
Symbol
Parameter
Value
Unit
IT(RMS)
RMS on-state current (full sine
wave)
IPAK/D2PAK/
DPAK/TO-220AB
Tc = 110°C
8
A
TO-220AB Ins. Tc = 100°C
ITSM
Non repetitive surge peak on-state F = 50 Hz
current (full cycle, Tj initial = 25°C) F = 60 Hz
t = 20 ms
80
t = 16.7 ms
84
A
I²t
dI/dt
I²t Value for fusing
Critical rate of rise of on-state cur-
rent IG = 2 x IGT , tr 100 ns
tp = 10 ms
F = 120 Hz
36
Tj = 125°C
50
A²s
A/µs
IGM
Peak gate current
tp = 20 µs
Tj = 125°C
4
A
PG(AV) Average gate power dissipation
Tj = 125°C
1
W
Tstg
Storage junction temperature range
Tj
Operating junction temperature range
- 40 to + 150
- 40 to + 125
°C
Tables 4: Electrical Characteristics (Tj = 25°C, unless otherwise specified)
SNUBBERLESS and Logic Level (3 quadrants)
Symbol
Test Conditions
Quad-
rant
T8
BTA08 / BTB08
Unit
T810 T835 TW SW CW BW
IGT (1)
I - II - III MAX. 10 35
VD = 12 V RL = 30
VGT
I - II - III MAX.
5 10 35 50 mA
1.3
V
VGD
VD = VDRM RL = 3.3 k
Tj = 125°C
I - II - III
MIN.
0.2
V
IH (2) IT = 100 mA
MAX. 15 35 10 15 35 50 mA
IL
IG = 1.2 IGT
I - III
25 50 10 25 50 70
MAX.
mA
II
30 60 15 30 60 80
dV/dt (2)
VD = 67 %VDRM gate open
Tj = 125°C
MIN. 40 400 20 40 400 1000 V/µs
(dV/dt)c = 0.1 V/µs Tj = 125°C
5.4 - 3.5 5.4 -
-
(dI/dt)c (2) (dV/dt)c = 10 V/µs Tj = 125°C MIN. 2.8 - 1.5 2.98 -
- A/ms
Without snubber Tj = 125°C
- 4.5 -
- 4.5 7
2/11
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