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BT169BW View Datasheet(PDF) - Philips Electronics

Part Name
Description
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BT169BW
Philips
Philips Electronics Philips
BT169BW Datasheet PDF : 7 Pages
1 2 3 4 5 6 7
Philips Semiconductors
Thyristor
logic level
Product specification
BT169W Series
IGT(Tj)
3 IGT(25 C)
BT169
2.5
2
1.5
1
0.5
0
-50
0
50
100
150
Tj / C
Fig.7. Normalised gate trigger current
IGT(Tj)/ IGT(25˚C), versus junction temperature Tj.
IL(Tj)
IL(25 C)
3
BT169
2.5
2
1.5
1
0.5
0
-50
0
50
100
150
Tj / C
Fig.8. Normalised latching current IL(Tj)/ IL(25˚C),
versus junction temperature Tj, RGK = 1 k.
IH(Tj)
IH(25 C)
3
BT169
2.5
2
1.5
1
0.5
0
-50
0
50
100
150
Tj / C
Fig.9. Normalised holding current IH(Tj)/ IH(25˚C),
versus junction temperature Tj, RGK = 1 k.
IT / A
5
Tj = 125 C
Tj = 25 C
4 Vo = 1.0 V
Rs = 0.27 Ohms
3
2
BT169W
typ
max
1
0
0
0.5
1
1.5
2
2.5
VT / V
Fig.10. Typical and maximum on-state characteristic.
100 Zth j-sp (K/W)
BT169W
10
1
P
D
tp
0.1
t
0.01
10us 0.1ms 1ms 10ms 0.1s
1s
10s
tp / s
Fig.11. Transient thermal impedance Zth j-sp, versus
pulse width tp.
1000 dVD/dt (V/us)
100
RGK = 1 kohms
10
1
0
50
100
150
Tj / C
Fig.12. Typical, critical rate of rise of off-state voltage,
dVD/dt versus junction temperature Tj.
September 1997
4
Rev 1.200
 

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