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BT169DW View Datasheet(PDF) - Philips Electronics

Part Name
Description
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BT169DW
Philips
Philips Electronics Philips
BT169DW Datasheet PDF : 7 Pages
1 2 3 4 5 6 7
Philips Semiconductors
Thyristor
logic level
Product specification
BT169W Series
1 Ptot / W
conduction
angle
degrees
0.8
30
60
90
120
0.6
180
form
factor
a
4
2.8
2.2
1.9
1.57
0.4
BT169W
Tsp(max) / C110
a = 1.57
1.9
2.2
113
2.8
4
116
119
0.2
122
00
125
0.1 0.2 0.3 0.4 0.5 0.6 0.7
IF(AV) / A
Fig.1. Maximum on-state dissipation, Ptot, versus
average on-state current, IT(AV), where a = form
factor = IT(RMS)/ IT(AV).
1000 ITSM / A
BT169
100
10 IT
ITSM
T time
Tj initial = 25 C max
1
10us
100us
1ms
T/s
10ms
Fig.2. Maximum permissible non-repetitive peak
on-state current ITSM, versus pulse width tp, for
sinusoidal currents, tp 10ms.
1.2 IT(RMS) / A
1
BT134W
112 C
0.8
0.6
0.4
0.2
0-50
0
50
100
150
Tsp / C
Fig.3. Maximum permissible rms current IT(RMS) ,
versus solder point temperature Tsp.
10 ITSM / A
8
6
BT169
IT
ITSM
T time
Tj initial = 25 C max
4
2
01
10
100
1000
Number of half cycles at 50Hz
Fig.4. Maximum permissible non-repetitive peak
on-state current ITSM, versus number of cycles, for
sinusoidal currents, f = 50 Hz.
IT(RMS) / A
2
BT134W
1.5
1
0.5
00.01
0.1
1
10
surge duration / s
Fig.5. Maximum permissible repetitive rms on-state
current IT(RMS), versus surge duration, for sinusoidal
currents, f = 50 Hz; Tsp 112˚C.
VGT(Tj)
1.6 VGT(25 C)
BT151
1.4
1.2
1
0.8
0.6
0.4-50
0
50
100
150
Tj / C
Fig.6. Normalised gate trigger voltage
VGT(Tj)/ VGT(25˚C), versus junction temperature Tj.
September 1997
3
Rev 1.200
 

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