BT169BW View Datasheet(PDF) - Philips Electronics
Part Name
Description
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BT169BW Datasheet PDF : 7 Pages
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Philips Semiconductors
Thyristor
logic level
Product specification
BT169W Series
THERMAL RESISTANCES
SYMBOL PARAMETER
Rth j-sp
Rth j-a
Thermal resistance
junction to solder point
Thermal resistance
junction to ambient
CONDITIONS
pcb mounted, minimum footprint
pcb mounted; pad area as in fig:14
MIN. TYP. MAX. UNIT
-
-
15 K/W
- 156 - K/W
-
70
- K/W
STATIC CHARACTERISTICS
Tj = 25 ˚C unless otherwise stated
SYMBOL PARAMETER
IGT
Gate trigger current
IL
Latching current
IH
Holding current
VT
On-state voltage
VGT
Gate trigger voltage
ID, IR
Off-state leakage current
CONDITIONS
VD = 12 V; IT = 10 mA; gate open circuit
VD = 12 V; IGT = 0.5 mA; RGK = 1 kΩ
VD = 12 V; IGT = 0.5 mA; RGK = 1 kΩ
IT = 2 A
VD = 12 V; IT = 10 mA; gate open circuit
VD = VDRM(max); IT = 10 mA; Tj = 125 ˚C;
gate open circuit
VD = VDRM(max); VR = VRRM(max); Tj = 125 ˚C;
RGK = 1 kΩ
MIN.
-
-
-
-
-
0.2
-
TYP.
50
2
2
1.35
0.5
0.3
0.05
MAX.
200
6
5
1.5
0.8
-
UNIT
µA
mA
mA
V
V
V
0.1 mA
DYNAMIC CHARACTERISTICS
Tj = 25 ˚C unless otherwise stated
SYMBOL PARAMETER
CONDITIONS
dVD/dt
tgt
tq
Critical rate of rise of
off-state voltage
Gate controlled turn-on
time
Circuit commutated
turn-off time
VDM =67% VDRM(max); Tj = 125 ˚C;
exponential waveform; RGK = 1k Ω
ITM = 2 A; VD = VDRM(max); IG = 10 mA;
dIG/dt = 0.1 A/µs
VD = 67% VDRM(max); Tj = 125 ˚C;
ITM = 1.6 A; VR = 35 V; dITM/dt = 30 A/µs;
dVD/dt = 2 V/µs; RGK = 1 kΩ
MIN.
-
-
-
TYP. MAX. UNIT
25
- V/µs
2
-
µs
100 -
µs
September 1997
2
Rev 1.200
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