datasheetbank_Logo     전자부품 반도체 검색엔진( 무료 PDF 다운로드 ) - 데이터시트뱅크

2N6400 데이터 시트보기 (PDF) - Teccor Electronics

부품명상세내역제조사
2N6400 Thyristor Product Catalog TECCOR
Teccor Electronics TECCOR
2N6400 Datasheet PDF : 223 Pages
First Prev 21 22 23 24 25 26 27 28 29 30 Next Last
Sensitive Triacs
Data Sheets
IT(RMS)
(11)
MAX
6A
8A
Isolated
Part No.
Non-isolated
MT2
MT2
G
MT2
MT1
G
MT2
TO-220
MT1
TO-252
D-Pak
MT1
G
MT2
TO-251
V-Pak
See “Package Dimensions” section for variations. (12)
L2006L5
L2006D5
L2006V5
L4006L5
L4006D5
L4006V5
L6006L5
L6006D5
L6006V5
L2006L6
L2006D6
L2006V6
L4006L6
L4006D6
L4006V6
L6006L6
L6006D6
L6006V6
L2006L8
L2006D8
L2006V8
L4006L8
L4006D8
L4006V8
L6006L8
L6006D8
L6006V8
L2008L6
L2008D6
L2008V6
L4008L6
L4008D6
L4008V6
L6008L6
L6008D6
L6008V6
L2008L8
L2008D8
L2008V8
L4008L8
L4008D8
L4008V8
L6008L8
L6008D8
L6008V8
VDRM
(1)
IGT
(3) (6)
IDRM
(1) (14)
Volts
MIN
200
400
600
200
400
600
200
400
600
200
400
600
200
400
600
mAmps
mAmps
QI QII QIII QIV TC = 25 °C TC = 110 °C
MAX
MAX
5
5
5
5
0.02
0.5
5
5
5
5
0.02
0.5
5
5
5
5
0.02
0.5
5
5
5 10
0.02
0.5
5
5
5 10
0.02
0.5
5
5
5 10
0.02
0.5
10 10 10 20
0.02
0.5
10 10 10 20
0.02
0.5
10 10 10 20
0.02
0.5
5
5
5 10
0.02
0.5
5
5
5 10
0.02
0.5
5
5
5 10
0.02
0.5
10 10 10 20
0.02
0.5
10 10 10 20
0.02
0.5
10 10 10 20
0.02
0.5
Specified Test Conditions
di/dt — Maximum rate-of-change of on-state current; IGT = 50 mA with
0.1 µs rise time
dv/dt — Critical rate-of-rise of off-state voltage at rated VDRM gate open
dv/dt(c) — Critical rate-of-rise of commutation voltage at rated VDRM
and IT(RMS) commutating di/dt = 0.54 rated IT(RMS)/ms; gate
unenergized
I2t — RMS surge (non-repetitive) on-state current for period of 8.3 ms
for fusing
IDRM — Peak off-state current, gate open; VDRM = max rated value
IGT — DC gate trigger current in specific operating quadrants;
VD = 12 V dc; RL = 60
IGTM — Peak gate trigger current
IH — Holding current gate open; initial on-state current = 100 mA dc
IT(RMS) — RMS on-state current conduction angle of 360°
ITSM — Peak one-cycle surge
PG(AV) — Average gate power dissipation
PGM — Peak gate power dissipation; IGT IGTM
tgt — Gate controlled turn-on time; IGT = 50 mA with 0.1 µs rise time
VDRM — Repetitive peak off-state/blocking voltage
VGT — DC gate trigger voltage; VD = 12 V dc; RL = 60
VTM — Peak on-state voltage at max rated RMS current
General Notes
• All measurements are made with 60 Hz resistive load and at an
ambient temperature of +25 °C unless otherwise specified.
• Operating temperature range (TJ) is -65 °C to +110 °C for TO-92
devices and -40 °C to 110 °C for all other devices.
• Storage temperature range (TS) is -65 °C to +150 °C for TO-92
devices, -40 °C to +150 °C for TO-202 devices, and -40 °C to
+125 °C for TO-220 devices.
• Lead solder temperature is a maximum of 230 °C for 10 seconds
maximum at a minimum of 1/16” (1.59 mm) from case.
• The case or lead temperature (TC or TL) is measured as shown on
dimensional outline drawings. See “Package Dimensions” section
of this catalog.
http://www.teccor.com
+1 972-580-7777
E1 - 4
©2002 Teccor Electronics
Thyristor Product Catalog
Direct download click here

 

Share Link : 

All Rights Reserved © datasheetbank.com 2014 - 2020 [ 개인정보 보호정책 ] [ 요청 데이타시트 ][ 제휴문의 ]