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Part Name
Description
BSS192PL6327(2006) View Datasheet(PDF) - Infineon Technologies
Part Name
Description
View to exact match
BSS192PL6327
(Rev.:2006)
SIPMOS® Small-Signal-Transistor
Infineon Technologies
BSS192PL6327 Datasheet PDF : 8 Pages
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13 Typ. gate charge
V
GS
=
f
(
Q
Gate
)
parameter:
I
D
= -0.19 A pulsed,
T
j
= 25 °C
BSS 192 P
-16
V
-12
-10
-8
20%
50%
-6
80%
-4
-2
0
0 1 2 3 4 5 6
nC
7.5
|Q
G
|
BSS 192 P
14 Drain-source breakdown voltage
V
(BR)DSS
=
f
(
T
j
)
BSS 192 P
-300
V
-285
-280
-275
-270
-265
-260
-255
-250
-245
-240
-235
-230
-225
-60 -20
20
60 100
°C
180
T
j
Rev 1.3
Page 7
200
6
-
1
2
-
04
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