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BSP320 View Datasheet(PDF) - Siemens AG

Part Name
Description
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BSP320 Datasheet PDF : 8 Pages
1 2 3 4 5 6 7 8
BSP 320 S
Maximum Ratings
Parameter
Chip or operating temperature
Storage temperature
Thermal resistance, chip to ambient air 1)
Thermal resistance, junction-soldering point 1)
IEC climatic category, DIN IEC 68-1
Symbol
Tj
Tstg
RthJA
RthJS
Values
Unit
-55 ... + 150 °C
-55 ... + 150
70
K/W
17
55 / 150 / 56
1) Transistor on epoxy pcb 40 mm x 40 mm x 1,5 mm with 6 cm2 copper area for drain connection
*) MIL STD 883, Method 3015, Class 2
Electrical Characteristics, at Tj = 25°C, unless otherwise specified
Parameter
Symbol
min.
Static Characteristics
Drain- source breakdown voltage
VGS = 0 V, ID = 0.25 mA, Tj = 25 °C
Gate threshold voltage
VGS=VDS, ID = 20 µA
Zero gate voltage drain current
VDS = 60 V, VGS = 0 V, Tj = -40 °C
VDS = 60 V, VGS = 0 V, Tj = 25 °C
VDS = 60 V, VGS = 0 V, Tj = 125 °C
Gate-source leakage current
VGS = 20 V, VDS = 0 V
Drain-Source on-state resistance
VGS = 10 V, ID = 2.9 A
V(BR)DSS
60
VGS(th)
2.1
IDSS
-
-
-
IGSS
-
RDS(on)
-
Values
typ.
max.
-
-
3
4
-
0.1
0.1
1
-
100
10
100
0.09
0.12
Unit
V
µA
nA
Semiconductor Group
2
29/01/1998
 

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