BSP320 View Datasheet(PDF) - Siemens AG
Part Name
Description
View to exact match
BSP320 Datasheet PDF : 8 Pages
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BSP 320 S
Avalanche energy EAS = ƒ(Tj)
parameter: ID = 2.9 A, VDD = 25 V
RGS = 25 Ω, L = 14.3 mH
65
mJ
55
EAS 50
45
40
35
30
25
20
15
10
5
0
20 40 60 80 100 120 °C 160
Tj
Typ. gate charge
VGS = ƒ(QGate)
parameter: ID puls = 3 A
16
V
VGS
12
10
8
0,2 VDS max
6
0,8 VDS max
4
2
0
0
2
4
6
8 10
14
QGate
Drain-source breakdown voltage
V(BR)DSS = ƒ(Tj)
71
V
68
V(BR)DSS
66
64
62
60
58
56
54
-60
-20
20
Semiconductor Group
60
100 °C 160
Tj
8
29/01/1998
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