BLW85 View Datasheet(PDF) - Advanced Semiconductor
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BLW85 Datasheet PDF : 1 Pages
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BLW85
NPN SILICON RF POWER TRANSISTOR
DESCRIPTION:
The ASI BLW85 is Designed for
Class C Amplifier Applications in VHF
Mobile Radios.
FEATURES:
• PG = 9.5 dB Typ. at 40 W /175 MHz
• ηC = 60% Typ. at 40 W /175 MHz
• Omnigold™ Metalization System
MAXIMUM RATINGS
IC
9.0 A
VCBO
36 V
VCEO
16 V
VEBO
4.0 V
PDISS
105 W @ TC = 25 °C
TJ
-65 °C to +200 °C
TSTG
-65 °C to +150 °C
θJC
1.6 °C/W
PACKAGE STYLE .380 4L FLG
.112 x 45°
B
A
E
C
Ø.125 NOM.
FULL R
J
.125
B
E
C
D
E
F
GH I
DIM
MINIMUM
inches / mm
A
.220 / 5.59
B
.785 / 19.94
C
.720 / 18.29
D
.970 / 24.64
E
F
.004 / 0.10
G
.085 / 2.16
H
.160 / 4.06
I
J
.240 / 6.10
MAXIMUM
inches / mm
.230 / 5.84
.730 / 18.54
.980 / 24.89
.385 / 9.78
.006 / 0.15
.105 / 2.67
.180 / 4.57
.280 / 7.11
.255 / 6.48
CHARACTERISTICS TC = 25 OC
SYMBOL
NONETEST CONDITIONS
BVCBO
IC = 50 mA
BVCES
IC = 50 mA
BVCEO
IC = 100 mA
BVEBO
IE = 25 mA
ICES
VCE = 18 V
hFE
VCE = 5.0 V
IC = 4.0 A
MINIMUM TYPICAL MAXIMUM
36
36
16
4.0
25.0
10
80
UNITS
V
V
V
V
mA
---
Cob
VCB = 15 V
f = 1.0 MHz
135
pF
PG
ηC
VCC = 12.5 V
POUT = 45 W
f = 175 MHz
4.5
75
dB
%
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004
Specifications are subject to change without notice.
REV. B
1/1
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