BLV11 View Datasheet(PDF) - Advanced Semiconductor

Part Name

Description

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BLV11

NPN SILICON RF POWER TRANSISTOR

Advanced Semiconductor 

BLV11

NPN SILICON RF POWER TRANSISTOR

DESCRIPTION:

The ASI BLV11 is Designed for

Class C, 12.5 Volt operation in FM

Amplifier Applications up to 250 MHz.

FEATURES INCLUDE:

• PG = 9.0 dB Typical at 175 MHz

• Emitter Ballasting

• Omnigold™ Metalization System

MAXIMUM RATINGS

IC

3.0 A

VCE

18 V

VCB

PDISS

TJ

TSTG

θJC

36 V

37 W @ TC = 25 OC

-65 OC to +200 OC

-65 OC to +150 OC

4.6 OC/W

PACKAGE STYLE .375 4L FLG

1 = Collector 2 = Base

3 & 4 = Emitter

ORDER CODE: ASI10492

CHARACTERISTICS TC = 25 OC

SYMBOL

TEST CONDITIONS

BVCBO

IC = 20 mA

BVCES

IC = 50 mA

BVCEO

IC = 50 mA

BVEBO

IE = 5.0 mA

ICBO

VCB = 15 V

hFE

VCE = 5.0 V

IC = 250 mA

MINIMUM TYPICAL MAXIMUM

36

36

18

4.0

2.0

5.0

50

UNITS

V

V

V

V

mA

---

Cob

VCB = 12.5 V

f = 1.0 MHz

45

pF

PG

VCE = 13.5 V

POUT = 15 W

ηC

f = 175 MHz

8.0

60

9.0

65

dB

%

A D V A N C E D S E M I C O N D U C T O R, I N C.

7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004

Specifications are subject to change without notice.

REV. A

1/1

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