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BF909A,215 View Datasheet(PDF) - NXP Semiconductors.
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Description
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BF909A,215
N-channel dual gate MOS-FETs
NXP Semiconductors.
BF909A,215 Datasheet PDF : 12 Pages
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NXP
Semiconductors
N-channel dual gate MOS-FETs
Product specification
BF909; BF909R
Table 1
Scattering parameters: T
amb
= 25
°
C; V
DS
= 5 V; V
G2-S
= 4 V; I
D
= 15 mA
f
(MHz)
s
11
MAGNITUDE
(ratio)
ANGLE
(deg)
s
21
MAGNITUDE
(ratio)
ANGLE
(deg)
s
12
MAGNITUDE
(ratio)
ANGLE
(deg)
50
100
200
300
400
500
600
700
800
900
1 000
0.985
0.978
0.957
0.931
0.899
0.868
0.848
0.816
0.792
0.772
0.754
−
6.4
−
12.6
−
25.0
−
36.5
−
47.6
−
57.4
−
66.6
−
74.6
−
82.2
−
89.3
−
95.6
4.064
3.997
3.886
3.682
3.484
3.260
3.053
2.829
2.652
2.470
2.328
172.3
164.9
150.8
137.3
123.8
111.7
101.0
90.3
79.9
69.5
59.5
0.001
0.002
0.005
0.006
0.007
0.007
0.006
0.005
0.005
0.005
0.006
86.9
82.7
74.3
68.9
59.6
57.9
58.5
65.5
83.3
114.9
138.7
s
22
MAGNITUDE
(ratio)
0.985
0.982
0.973
0.960
0.947
0.936
0.927
0.919
0.913
0.910
0.909
ANGLE
(deg)
−
3.2
−
6.4
−
12.6
−
18.6
−
24.2
−
29.6
−
34.8
−
39.8
−
44.6
−
49.5
−
54.6
Table 2
Noise data: T
amb
= 25
°
C; V
DS
= 5 V; V
G2-S
= 4 V; I
D
= 15 mA
f
(MHz)
F
min
(dB)
Γ
opt
(ratio)
800
2.00
0.603
(deg)
67.71
r
n
0.581
Rev. 02 - 19 November 2007
9 of 12
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