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BF909A,215 View Datasheet(PDF) - NXP Semiconductors.

Part NameDescriptionManufacturer
BF909A,215 N-channel dual gate MOS-FETs NXP
NXP Semiconductors. NXP
BF909A,215 Datasheet PDF : 12 Pages
1 2 3 4 5 6 7 8 9 10 Next Last
NXP Semiconductors
N-channel dual gate MOS-FETs
Product specification
BF909; BF909R
Table 1 Scattering parameters: Tamb = 25 °C; VDS = 5 V; VG2-S = 4 V; ID = 15 mA
f
(MHz)
s11
MAGNITUDE
(ratio)
ANGLE
(deg)
s21
MAGNITUDE
(ratio)
ANGLE
(deg)
s12
MAGNITUDE
(ratio)
ANGLE
(deg)
50
100
200
300
400
500
600
700
800
900
1 000
0.985
0.978
0.957
0.931
0.899
0.868
0.848
0.816
0.792
0.772
0.754
6.4
12.6
25.0
36.5
47.6
57.4
66.6
74.6
82.2
89.3
95.6
4.064
3.997
3.886
3.682
3.484
3.260
3.053
2.829
2.652
2.470
2.328
172.3
164.9
150.8
137.3
123.8
111.7
101.0
90.3
79.9
69.5
59.5
0.001
0.002
0.005
0.006
0.007
0.007
0.006
0.005
0.005
0.005
0.006
86.9
82.7
74.3
68.9
59.6
57.9
58.5
65.5
83.3
114.9
138.7
s22
MAGNITUDE
(ratio)
0.985
0.982
0.973
0.960
0.947
0.936
0.927
0.919
0.913
0.910
0.909
ANGLE
(deg)
3.2
6.4
12.6
18.6
24.2
29.6
34.8
39.8
44.6
49.5
54.6
Table 2 Noise data: Tamb = 25 °C; VDS = 5 V; VG2-S = 4 V; ID = 15 mA
f
(MHz)
Fmin
(dB)
Γopt
(ratio)
800
2.00
0.603
(deg)
67.71
rn
0.581
Rev. 02 - 19 November 2007
9 of 12
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