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BF909A,215 View Datasheet(PDF) - NXP Semiconductors.

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Description
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BF909A,215
NXP
NXP Semiconductors. NXP
BF909A,215 Datasheet PDF : 12 Pages
1 2 3 4 5 6 7 8 9 10 Next Last
NXP Semiconductors
N-channel dual gate MOS-FETs
Product specification
BF909; BF909R
60
handbook, halfpage
y fs
(mS)
40
20
MLB940
VG2 S = 4 V
3.5 V
3V
2.5 V
2V
0
0
10
20
30
I D (mA)
VDS = 5 V.
Tj = 25 °C.
Fig.8 Forward transfer admittance as a
function of drain current; typical values.
25
handbook, halfpage
ID
(mA)
20
MLB941
15
10
5
0
0
20
40 I G1 (µA) 60
VDS = 5 V; VG2-S = 4 V.
Tj = 25 °C.
Fig.9 Drain current as a function of gate 1 current;
typical values.
16
handbook, halfpage
ID
(mA)
12
MLB942
8
4
0
0
2
4
6
VGG (V)
VDS = 5 V; VG2-S = 4 V.
RG1 = 120 k(connected to VGG); Tj = 25 °C.
Fig.10 Drain current as a function of gate 1
supply voltage (= VGG); typical values;
see Fig.18.
30
handbook, halfpage
ID
(mA)
20
10
MLB943
R G1 = 47 k68 k
82 k
100 k
120 k
150 k
180 k
220 k
0
0
2
4
6
8
VGG = VDS (V)
VG2-S = 4 V.
RG1 connected to VGG; Tj = 25 °C.
Fig.11 Drain current as a function of gate 1
(= VGG) and drain supply voltage;
typical values; see Fig.18.
Rev. 02 - 19 November 2007
6 of 12
 

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