BF909A View Datasheet(PDF) - NXP Semiconductors.
Part Name
Description
View to exact match
BF909A Datasheet PDF : 12 Pages
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NXP Semiconductors
N-channel dual gate MOS-FETs
Product specification
BF909; BF909R
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
Rth j-a
Rth j-s
thermal resistance from junction to ambient
BF909
BF909R
thermal resistance from junction to soldering point
BF909
BF909R
note 1
note 2
Ts = 92 °C
Ts = 78 °C
Notes
1. Device mounted on a printed-circuit board.
2. Ts is the temperature at the soldering point of the source lead.
VALUE
500
550
290
360
UNIT
K/W
K/W
K/W
K/W
STATIC CHARACTERISTICS
Tj = 25 °C; unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
V(BR)G1-SS
V(BR)G2-SS
V(F)S-G1
V(F)S-G2
VG1-S(th)
gate 1-source breakdown voltage
gate 2-source breakdown voltage
forward source-gate 1 voltage
forward source-gate 2 voltage
gate 1-source threshold voltage
VG2-S(th)
IDSX
gate 2-source threshold voltage
drain-source current
IG1-SS
IG2-SS
gate 1 cut-off current
gate 2 cut-off current
VG2-S = VDS = 0; IG1-S = 10 mA
VG1-S = VDS = 0; IG2-S = 10 mA
VG2-S = VDS = 0; IS-G1 = 10 mA
VG1-S = VDS = 0; IS-G2 = 10 mA
VG2-S = 4 V; VDS = 5 V;
ID = 20 µA
VG1-S = VDS = 5 V; ID = 20 µA
VG2-S = 4 V; VDS = 5 V;
RG1 = 120 kΩ; note 1
VG1-S = 5 V; VG2-S = VDS = 0
VG2-S = 5 V; VG1-S = VDS = 0
Note
1. RG1 connects gate 1 to VGG = 5 V; see Fig.18.
MIN.
6
6
0.5
0.5
0.3
MAX.
15
15
1.5
1.5
1
UNIT
V
V
V
V
V
0.3
1.2
V
12
20
mA
−
50
nA
−
50
nA
DYNAMIC CHARACTERISTICS
Common source; Tamb = 25 °C; VDS = 5 V; VG2-S = 4 V; ID = 15 mA; unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN. TYP.
yfs
Cig1-s
Cig2-s
Cos
Crs
F
forward transfer admittance pulsed; Tj = 25 °C
36
43
input capacitance at gate 1 f = 1 MHz
−
3.6
input capacitance at gate 2 f = 1 MHz
−
2.3
drain-source capacitance f = 1 MHz
−
2.3
reverse transfer capacitance f = 1 MHz
−
35
noise figure
f = 800 MHz; GS = GSopt; BS = BSopt −
2
MAX.
50
4.3
3
3
50
2.8
UNIT
mS
pF
pF
pF
fF
dB
Rev. 02 - 19 November 2007
4 of 12
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