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BF909A,215 View Datasheet(PDF) - NXP Semiconductors.

Part NameDescriptionManufacturer
BF909A,215 N-channel dual gate MOS-FETs NXP
NXP Semiconductors. NXP
BF909A,215 Datasheet PDF : 12 Pages
1 2 3 4 5 6 7 8 9 10 Next Last
NXP Semiconductors
N-channel dual gate MOS-FETs
Product specification
BF909; BF909R
FEATURES
Specially designed for use at 5 V supply voltage
High forward transfer admittance
Short channel transistor with high forward transfer
admittance to input capacitance ratio
Low noise gain controlled amplifier up to 1 GHz
Superior cross-modulation performance during AGC.
transistor consists of an amplifier MOS-FET with source
and substrate interconnected and an internal bias circuit to
ensure good cross-modulation performance during AGC.
CAUTION
The device is supplied in an antistatic package. The
gate-source input must be protected against static
discharge during transport or handling.
APPLICATIONS
VHF and UHF applications with 3 to 7 V supply voltage
such as television tuners and professional
communications equipment.
DESCRIPTION
Enhancement type field-effect transistor in a plastic
microminiature SOT143 or SOT143R package. The
PINNING
PIN
1
2
3
4
SYMBOL
DESCRIPTION
s, b source
d
drain
g2
gate 2
g1
gate 1
handbook, halfpage
d
handbook, halfpage
d
4
3
3
4
g2
g1
1
2
Top view
MAM124
s,b
BF909 marking code: %M3.
Fig.1 Simplified outline (SOT143) and symbol.
g2
g1
21
Top view
MAM125 - 1
s,b
BF909R marking code: %M4.
Fig.2 Simplified outline (SOT143R) and symbol.
QUICK REFERENCE DATA
SYMBOL
VDS
ID
Ptot
Tj
yfs
Cig1-s
Crs
F
PARAMETER
drain-source voltage
drain current
total power dissipation
operating junction temperature
forward transfer admittance
input capacitance at gate 1
reverse transfer capacitance
noise figure
CONDITIONS
f = 1 MHz
f = 800 MHz
MIN.
36
TYP.
43
3.6
35
2
MAX.
7
40
200
150
50
4.3
50
2.8
UNIT
V
mA
mW
°C
mS
pF
fF
dB
Rev. 02 - 19 November 2007
2 of 12
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