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BF909 View Datasheet(PDF) - Philips Electronics

Part NameDescriptionManufacturer
BF909 N-channel dual gate MOS-FETs Philips
Philips Electronics Philips
BF909 Datasheet PDF : 11 Pages
1 2 3 4 5 6 7 8 9 10
Philips Semiconductors
N-channel dual gate MOS-FETs
Product specification
BF909; BF909R
Table 1 Scattering parameters: Tamb = 25 °C; VDS = 5 V; VG2-S = 4 V; ID = 15 mA
f
(MHz)
s11
MAGNITUDE
(ratio)
ANGLE
(deg)
s21
MAGNITUDE
(ratio)
ANGLE
(deg)
s12
MAGNITUDE
(ratio)
ANGLE
(deg)
50
100
200
300
400
500
600
700
800
900
1 000
0.985
0.978
0.957
0.931
0.899
0.868
0.848
0.816
0.792
0.772
0.754
6.4
12.6
25.0
36.5
47.6
57.4
66.6
74.6
82.2
89.3
95.6
4.064
3.997
3.886
3.682
3.484
3.260
3.053
2.829
2.652
2.470
2.328
172.3
164.9
150.8
137.3
123.8
111.7
101.0
90.3
79.9
69.5
59.5
0.001
0.002
0.005
0.006
0.007
0.007
0.006
0.005
0.005
0.005
0.006
86.9
82.7
74.3
68.9
59.6
57.9
58.5
65.5
83.3
114.9
138.7
s22
MAGNITUDE
(ratio)
0.985
0.982
0.973
0.960
0.947
0.936
0.927
0.919
0.913
0.910
0.909
ANGLE
(deg)
3.2
6.4
12.6
18.6
24.2
29.6
34.8
39.8
44.6
49.5
54.6
Table 2 Noise data: Tamb = 25 °C; VDS = 5 V; VG2-S = 4 V; ID = 15 mA
f
(MHz)
Fmin
(dB)
Γopt
(ratio)
800
2.00
0.603
(deg)
67.71
rn
0.581
1995 Apr 25
9
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