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BF909 Просмотр технического описания (PDF) - Philips Electronics

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BF909 N-channel dual gate MOS-FETs Philips
Philips Electronics Philips
BF909 Datasheet PDF : 11 Pages
1 2 3 4 5 6 7 8 9 10
Philips Semiconductors
N-channel dual gate MOS-FETs
Product specification
BF909; BF909R
10 2
y fs
(mS)
10
MLB948
10 2
handbook1,0halfpage
y fs
yos
ϕfs
(mS)
(deg)
1
ϕfs
10
10 1
MLB949
bos
gos
1
10
102
f (MHz)
1
10 3
VDS = 5 V; VG2 = 4 V.
ID = 15 mA; Tamb = 25 °C.
Fig.16 Forward transfer admittance and phase as
a function of frequency; typical values.
10 2
10
102
f (MHz)
10 3
VDS = 5 V; VG2 = 4 V.
ID = 15 mA; Tamb = 25 °C.
Fig.17 Output admittance as a function of
frequency; typical values.
VAGC
R1
10 k
C1
4.7 nF
C3 12 pF
RGEN
50
VI
C2
R2
50
4.7 nF
R G1
VGG
DUT
R3
10
C5
2.2
pF
L1
350 nH
C4
4.7 nF
VDS
RL
50
MLD151
1995 Apr 25
Fig.18 Cross-modulation test set-up.
8
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