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BF909 Просмотр технического описания (PDF) - Philips Electronics

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BF909 N-channel dual gate MOS-FETs Philips
Philips Electronics Philips
BF909 Datasheet PDF : 11 Pages
1 2 3 4 5 6 7 8 9 10
Philips Semiconductors
N-channel dual gate MOS-FETs
Product specification
BF909; BF909R
110
handbook, halfpage
Vunw
(dBµV)
100
MLB936
handbook,3h0alfpage
ID
(mA)
20
MLB937
VG2 S = 4 V 3 V 2.5 V
2V
90
80
0
10
20
30
40
50
gain reduction (dB)
VDS = 5 V; VGG = 5 V; fw = 50 MHz.
funw = 60 MHz; Tamb = 25 °C; RG1 = 120 k.
Fig.4 Unwanted voltage for 1% cross-modulation
as a function of gain reduction; typical
values; see Fig.18.
1.5 V
10
1V
0
0
0.4
0.8
1.2
1.6
2.0
VG1 S (V)
VDS = 5 V.
Tj = 25 °C.
Fig.5 Transfer characteristics; typical values.
handbook,3h0alfpage
ID
(mA)
20
10
VG1 S = 1.4 V
1.3 V
1.2 V
1.1 V
1.0 V
0.9 V
MLB938
0
0
2
4
6
8
10
VDS (V)
VDS = 5 V.
VG2-S = 4 V.
Tj = 25 °C.
Fig.6 Output characteristics; typical values.
1995 Apr 25
handboo2k,0h0alfpage
I G1
(µA)
150
100
50
MLB939
VG2 S = 4 V
3.5 V
3V
2.5 V
2V
0
0
1
2
3
VG1 S (V)
VDS = 5 V.
Tj = 25 °C.
Fig.7 Gate 1 current as a function of gate 1
voltage; typical values.
5
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