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BF909R View Datasheet(PDF) - Philips Electronics

Part Name
Description
View to exact match
BF909R
Philips
Philips Electronics Philips
BF909R Datasheet PDF : 11 Pages
1 2 3 4 5 6 7 8 9 10
Philips Semiconductors
N-channel dual gate MOS-FETs
Product specification
BF909; BF909R
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
VDS
ID
IG1
IG2
Ptot
Tstg
Tj
PARAMETER
drain-source voltage
drain current
gate 1 current
gate 2 current
total power dissipation
BF909
BF909R
storage temperature
operating junction temperature
CONDITIONS
MIN.
see Fig.3
up to Tamb = 50 °C; note 1
up to Tamb = 40 °C; note 1
65
Note
1. Device mounted on a printed-circuit board.
MAX.
7
40
±10
±10
200
200
+150
150
UNIT
V
mA
mA
mA
mW
mW
°C
°C
250
handbook, halfpage
Ptot
(mW)
200
MLB935
150
BF909R BF909
100
50
0
0
50
100
150
200
Tamb (oC)
Fig.3 Power derating curves.
1995 Apr 25
3
 

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