BF1217 View Datasheet(PDF) - NXP Semiconductors.

Part Name

Description

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BF1217

N-channel dual gate MOSFET

NXP Semiconductors. 

BF1217WR

N-channel dual gate MOSFET

Rev. 2 — 20 June 2011

Product data sheet

1. Product profile

CAUTION

1.1 General description

Enhancement type N-channel field-effect transistor with source and substrate

interconnected. Integrated diodes between gates and source protect against excessive

input voltage surges. The BF1217WR is encapsulated in the SOT343R plastic package.

This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken

during transport and handling.

1.2 Features and benefits

 Excellent low frequency noise performance

 Superior cross modulation performance during AGC

 High forward transfer admittance

 High forward transfer admittance to input capacitance ratio

1.3 Applications

 Gain controlled low noise amplifiers for VHF and UHF applications with 5 V supply

voltage

 digital and analog television tuners

 professional communication equipment

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