BF1207,115 View Datasheet(PDF) - NXP Semiconductors.
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Description
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BF1207,115 Datasheet PDF : 23 Pages
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NXP Semiconductors
BF1207
Dual N-channel dual gate MOSFET
40
yfs
(mS)
30
20
001aac884
(1)
(2)
(3)
25
ID
(mA)
20
15
10
001aac885
(1)
(2)
(3)
(4)
(5)
(6)
(7)
10
(4)
(5)
(7)
(6)
0
0
8
16
24
32
ID (mA)
(1) VG2-S = 4 V.
(2) VG2-S = 3.5 V.
(3) VG2-S = 3 V.
(4) VG2-S = 2.5 V.
(5) VG2-S = 2 V.
(6) VG2-S = 1.5 V.
(7) VG2-S = 1 V.
VDS(A) = 5 V; Tj = 25 C.
Fig 6. Amplifier A: forward transfer admittance as a
function of drain current; typical values
5
0
0
2
4
6
VGG = VDS (V)
(1) RG1(A) = 39 k.
(2) RG1(A) = 47 k
(3) RG1(A) = 68 k.
(4) RG1(A) = 82 k.
(5) RG1(A) = 100 k
(6) RG1(A) = 120 k.
(7) RG1(A) = 150 k.
VG2-S = 4 V; Tj = 25 C.
Fig 7. Amplifier A: drain current as a function of VDS
and VGG; typical values
20
ID
(mA)
16
001aac886
12
8
4
0
0
1
2
3
4
5
Vsupply (V)
Fig 8.
VG2-S = 4 V, Tj = 25 C, RG1(B) = 68 k (connected to ground); see Figure 3.
Amplifier A: drain current of amplifier A as a function of supply voltage of A and B amplifier; typical
values
BF1207
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 2 — 7 September 2011
© NXP B.V. 2011. All rights reserved.
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