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BF1207,115 View Datasheet(PDF) - NXP Semiconductors.

Part Name
Description
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BF1207,115
NXP
NXP Semiconductors. NXP
BF1207,115 Datasheet PDF : 23 Pages
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NXP Semiconductors
BF1207
Dual N-channel dual gate MOSFET
250
Ptot
(mW)
200
001aac741
150
100
50
0
0
50
Fig 1. Power derating curve
100
150
200
Tsp (°C)
6. Thermal characteristics
Table 6.
Symbol
Rth(j-sp)
Thermal characteristics
Parameter
thermal resistance from junction
to soldering point
Conditions
Typ
Unit
240
K/W
7. Static characteristics
Table 7. Static characteristics
Tj = 25 C.
Symbol Parameter
Per MOSFET; unless otherwise specified
V(BR)DSS drain-source breakdown voltage
V(BR)G1-SS
V(BR)G2-SS
VF(S-G1)
VF(S-G2)
VG1-S(th)
VG2-S(th)
IDSX
gate1-source breakdown voltage
gate2-source breakdown voltage
forward source-gate1 voltage
forward source-gate2 voltage
gate1-source threshold voltage
gate2-source threshold voltage
drain-source current
Conditions
VG1-S = VG2-S = 0 V; ID = 10 A
amplifier A
amplifier B
VGS = VDS = 0 V; IG1-S = 10 mA
VGS = VDS = 0 V; IG2-S = 10 mA
VG2-S = VDS = 0 V; IS-G1 = 10 mA
VG1-S = VDS = 0 V; IS-G2 = 10 mA
VDS = 5 V; VG2-S = 4 V; ID = 100 A
VDS = 5 V; VG1-S = 5 V; ID = 100 A
VG2-S = 4 V; VDS = 5 V; RG1 = 68 k
amplifier A
amplifier B
Min Typ Max Unit
6-
6-
6-
6-
0.5 -
0.5 -
0.3 -
0.4 -
-V
-V
10 V
10 V
1.5 V
1.5 V
1.0 V
1.0 V
[1] 13 -
[2] 9
-
23 mA
19 mA
BF1207
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 2 — 7 September 2011
© NXP B.V. 2011. All rights reserved.
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