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BF1207,115 View Datasheet(PDF) - NXP Semiconductors.

Part Name
Description
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BF1207,115
NXP
NXP Semiconductors. NXP
BF1207,115 Datasheet PDF : 23 Pages
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BF1207
Dual N-channel dual gate MOSFET
Rev. 2 — 7 September 2011
Product data sheet
1. Product profile
CAUTION
1.1 General description
The BF1207 is a combination of two dual gate MOSFET amplifiers with shared source
and gate2 leads and an integrated switch.
The source and substrate are interconnected. Internal bias circuits enable Direct Current
(DC) stabilization and a very good cross-modulation performance during Automatic Gain
Control (AGC). Integrated diodes between the gates and source protect against excessive
input voltage surges. The BF1207 has a SOT363 micro-miniature plastic package.
This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken
during transport and handling.
1.2 Features and benefits
Two low noise gain controlled amplifiers in a single package. One with a fully
integrated bias and one with partly integrated bias
Internal switch to save external components
Superior cross-modulation performance during AGC
High forward transfer admittance
High forward transfer admittance to input capacitance ratio
1.3 Applications
Gain controlled low noise amplifiers for Very High Frequency (VHF) and Ultra High
Frequency (UHF) applications with 5 V supply voltage, such as digital and analog
television tuners and professional communication equipment
 

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