BF1207,115 View Datasheet(PDF) - NXP Semiconductors.
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Description
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BF1207,115 Datasheet PDF : 23 Pages
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NXP Semiconductors
BF1207
Dual N-channel dual gate MOSFET
120
Vunw
(dBμV)
110
100
90
001aac900
0
gain
reduction
(dB)
10
20
30
40
001aac901
80
0
20
40
60
gain reduction (dB)
VDS(B) = 5 V; VGG = 5 V; VDS(A) = VG1-S(A) = 0 V;
RG1(B) = 150 k (connected to VGG); fw = 50 MHz;
funw = 60 MHz; Tamb = 25 C; see Figure 30.
Fig 22. Amplifier B: unwanted voltage for 1 %
cross-modulation as a function of gain
reduction; typical values
20
ID
(mA)
16
50
0
1
2
3
4
VAGC (V)
VDS(B) = 5 V; VGG = 5 V; VDS(A) = VG1-S(A) = 0 V;
RG1(B) = 150 k (connected to VGG); f = 50 MHz;
Tamb = 25 C; see Figure 30.
Fig 23. Amplifier B: typical gain reduction as a
function of AGC voltage; typical values
001aac902
12
8
4
0
0
20
40
60
gain reduction (dB)
VDS(B) = 5 V; VGG = 5 V; VDS(A) = VG1-S(A) = 0 V; RG1(B) = 150 k (connected to VGG); f = 50 MHz; Tamb = 25 C; see Figure 30.
Fig 24. Amplifier B: drain current as a function of gain reduction; typical values
BF1207
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 2 — 7 September 2011
© NXP B.V. 2011. All rights reserved.
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