BF1207,115 View Datasheet(PDF) - NXP Semiconductors.
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Description
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BF1207,115 Datasheet PDF : 23 Pages
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NXP Semiconductors
BF1207
Dual N-channel dual gate MOSFET
40
yfs
(mS)
30
20
001aac896
(1)
(2)
(3)
10
(4)
(7)
(6)
0
0
8
(5)
16
24
32
ID (mA)
(1) VG2-S = 4 V.
(2) VG2-S = 3.5 V.
(3) VG2-S = 3 V.
(4) VG2-S = 2.5 V.
(5) VG2-S = 2 V.
(6) VG2-S = 1.5 V.
(7) VG2-S = 1 V.
VDS(B) = 5 V; VG1-S(A) = 0 V; Tj = 25 C.
Fig 18. Amplifier B: forward transfer admittance as a
function of drain current; typical values
20
ID
(mA)
16
12
8
4
0
0
1
2
3
(1) VDS = 5 V.
(2) VDS = 4.5 V.
(3) VDS = 4 V.
(4) VDS = 3.5 V.
(5) VDS = 3 V.
VG1-S(A) = 0 V; Tj = 25 C.
001aac897
(1)
(2)
(3)
(4)
(5)
4
5
VG2-S (V)
Fig 19. Amplifier B: drain current as function of gate2
voltage; typical values
20
ID(A)
(mA)
16
001aac898
16
ID
(mA)
12
001aac899
12
8
8
4
4
0
0
2
4
6
VDS (V)
VDS(B) = 5 V; VG1-S(A) = 0 V; Tj = 25 C.
Fig 20. Amplifier B: drain current as a function of
drain source voltage; typical values
0
−40
−30
−20
−10
0
IG1 (μA)
VDS(B) = 5 V; VG2-S = 4 V; VG1-S(A) = 0 V; Tj = 25 C.
Fig 21. Amplifier B: drain current as a function of
gate1 current; typical values
BF1207
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 2 — 7 September 2011
© NXP B.V. 2011. All rights reserved.
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